Ramamoorthy, K. and Jayachandran, M. and Sankaranarayanan, K. and Misra, P. and Kukreja, L.M. and Sanjeeviraja, C. (2004) Development of a novel high speed (electron-mobility) epi-n-ZnO thin films by L-MBE for III–V opto-electronic devices. Current Applied Physics, 4 (6). pp. 679-684. ISSN 1567-1739

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Abstract

Intrinsic epitaxial zinc oxide (epi-ZnO) thin films were grown by laser-molecular beam epitaxy (L-MBE), i.e., pulsed laser deposition (PLD) technique using Johnson Matthey ‘‘specpure’’-grade ZnO pellets. The effects of substrate temperatures on ZnO thin film growth, electrical conductivity (r), mobility (l) and carrier concentration (n) were studied. As well as the feasibility of developing high quality conducting oxide thin films was also studied simultaneously. The highest conductivity was found for optimized epi-ZnO thin films is r ¼ 0:06 103 ohm1 cm1 (n-type) (which is almost at the edge of semiconductivity range), carrier density n ¼ 0:316 1019 cm3 and mobility l ¼ 98 cm2/V s. The electrical studies further confirmed the semiconductor characteristics of epi-n-ZnO thin films. The relationship between the optical and electrical properties were also graphically enumerated. The electrical parameter values for the films were calculated, graphically enumerated and tabulated. As a novelty point of view, we have concluded that without doping and annealing, we have obtained optimum electrical conductivity with high optical transparency (P95%) for as deposited ZnO thin films using PLD. Also, this is the first time that we have applied PLD made ZnO thin films to iso-, hetero-semiconductor–insulator–semiconductor (SIS) type solar cells as transparent conducting oxide (TCO) window layer. We hope that surely these data be helpful either as a scientific or technical basis in the semiconductor processing.

Item Type:	Article
Uncontrolled Keywords:	Laser epitaxy; Semiconducting materials; Thin film structure and morphology; Buffer layer on InP; Solar cells
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdu cecri
Date Deposited:	05 Apr 2012 10:43
Last Modified:	05 Apr 2012 10:43
URI:	http://cecri.csircentral.net/id/eprint/924

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