Saaminathan, V. and Murali, K.R. (2006) Variation of Nd and Vfb for different compositions of CdSexTe1-x thin films by pulse plating technique. Physica B: Condensed Matter, 373 (2). pp. 233-239. ISSN 0921-4526

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Abstract

CdSexTe1-x thin films with 0oxo1 have been pulse electrodeposited on titanium (Ti), nickel (Ni) and stainless-steel (SS) substrates with different duty cycles. The size of the particles could be controlled by the pulse parameters. The deposition was carried out at room temperature for 1 h under potentiostatic mode with CdSO4, SeO2, TeO2 and H2SO4 as precursors. As-deposited and annealed films coated on Ti, Ni and SS were characterized by X-ray diffraction technique and SEM, and their electrical properties were studied. The asdeposited films exhibited a cubic structure; those after heat treatment at 500 1C in air exhibited a hexagonal structure. Variation of donor concentration and the flat band potential for different values of ‘x’ and duty cycles were studied for CdSexTe1�x thin films. The semiconductor parameters for all compositions coated on Ti, Ni and SS were estimated. It showed good agreement with the earlier reports.

Item Type:	Article
Uncontrolled Keywords:	Semiconductor; Thin films; Flat band potential; Carrier concentration; Pulse plating
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdu cecri
Date Deposited:	06 Apr 2012 15:28
Last Modified:	06 Apr 2012 15:28
URI:	http://cecri.csircentral.net/id/eprint/794

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