Murali, K.R. and Balasubramanian, M. (2006) Properties of pulse plated ZnSe films. Materials Science and Engineering: A, 431 (1-2). pp. 118-122. ISSN 0921-5093

PDF Restricted to Registered users only Download (270Kb) | Request a copy

Abstract

ZnSe thin films were pulse plated on titanium and tin oxide substrates maintained at room temperature from the precursors. The films exhibited cubic structure. Optical band gap of 2.70 eV was obtained. XPS measurements indicated the formation of ZnSe. AFM studies indicated that the grain size decreased as the duty cycle decreased. Hot probe measurements indicated films to be n-type. Luminescence emission was observed at 675 nm for an excitation of 450 nm.

Item Type:	Article
Uncontrolled Keywords:	ZnSe; Semiconductor; Thin film; Electrodeposition; Pulse plating
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdu cecri
Date Deposited:	06 Apr 2012 14:54
Last Modified:	06 Apr 2012 14:54
URI:	http://cecri.csircentral.net/id/eprint/781

Actions (login required)

View Item