Subramanian, B. and Mohamed Ibrahim, M. and Senthilkumar, V. and Murali, K.R. and Vidhya, V.S. and Sanjeeviraja, C. and Jayachandran, M. (2008) Optoelectronic and electrochemical properties of nickeloxide(NiO)films deposited by DC reactive magnetron sputtering. Physica B: Condensed Matter , 403 (21-22). pp. 4104-4110. ISSN 0921-4526

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Abstract

Nickel oxide(NiO)thin films were deposite donto glass substrates by the DC reactive magnetron sputteringtechnique.Theas-depositedfilmswerepost-annealedinairat450–500 1C for5h.The effect of anealingon the structural,microstructural,electrical and optical properties were studied by X-ray diffraction (XRD),atomicforcemicroscope(AFM),four-probe resistivity measurement and UV-vis spectrophotometer.XRD studies indicated cubic structure with a lattice parameter of 0.4193nm.The band gapofthefilmswasfoundtobe3.58eV.Fouriertransforminfrared(FTIR)studiesindicateda broad spectrumcenteredat451.6cm�1. Photoluminescencestudiesexhibitedroomtemperature emissionat440nm.Cyclicvoltammetrystudiesin1MKOHsolutionrevealedtheelectrochromicnature of theNiOfilmspreparedinthepresentstudy.

Item Type:	Article
Uncontrolled Keywords:	Nickel oxide; Thin films; Semiconductor; Electrochromism; DC magnetron sputtering
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdu cecri
Date Deposited:	31 Mar 2012 11:12
Last Modified:	31 Mar 2012 11:12
URI:	http://cecri.csircentral.net/id/eprint/445

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