Murali, K.R. and Elango, P. and Andavan, P. and Venkatachalam, K. (2008) Preparation of CdSxSe1–x films by brush plating technique and their characteristics. Journal of Materials Science: Materials Electron, 19 (3). pp. 289-293.

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Abstract

CdSxSe1–x films were deposited for the first time by the brush plating technique from aqueous precursors. X-ray diffraction patterns of the films indicated polycrystalline structure with peaks corresponding to the hexagonal phase. Optical absorption measurements indicated the band gap to shift from 1.68 to 2.39 eV as the value of x is increased. XPS spectra indicated the peaks corresponding to Cd (3d5/2 and 3d3/2), Se (3d5/2 and 3d3/2) and S (3d5/2 and 3d3/2) levels. Surface morphology studies indicated the grain size to increase with increase of selenium concentration. The resistivity of the films changed from 20 ohm cm to 250 ohm cm as the sulphur content increased. 1

Item Type:	Article
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdu cecri
Date Deposited:	01 Apr 2012 10:55
Last Modified:	01 Apr 2012 10:55
URI:	http://cecri.csircentral.net/id/eprint/344

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