Senthilkumar, SM. and Selvakumar, K. and Karthikeyan, J. and Thangamuthu, R. and Murugan, P. and Rajput, P. and Jha, S.N. and Bhattacharyya, D. and Navascues, N. and Irusta, S. Manifestation of Concealed Defects in MoS2 Nanospheres for Efficient and Durable Electrocatalytic Hydrogen Evolution Reaction. ChemistrySelect. ISSN 2365-6549

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Abstract

MoS2 nanospheres were formed using a template free hydrothermal process, which exhibit high catalytic activity towards hydrogen evolution reaction (HER). The extend of defect sites are probed by extended X-ray absorption fine structure which found decrease in co-ordination number at Mo site rather than at S site. DFT calculations identified an uneven strain and defect distribution between two S planes of curved MoS2. Based on hydrogen adsorption on various sites, we identify a new pathway called “extended activity @ shielded defects”, for Volmer-Tafel and Volmer-Heyrovsky mechanisms, where H adsorption occurs at exposed S layer driven by defects in underneath S layer of nanosphere. Having higher defect concentration it exhibited excellent HER activity with overpotential of �0.12 V, Tafel slope of 90 mV/decade, and higher turnover frequency. Our findings provide an avenue to design and engineer advanced nanostructures for catalysis, electronic devices, and other potential applications.

Item Type:	Article
Uncontrolled Keywords:	Nanospheres; Electrolytic hydrogen; evolution reaction
Subjects:	Functional Materials Theoretical Electrochemistry
Divisions:	UNSPECIFIED
Depositing User:	Dr. N Meyyappan
Date Deposited:	27 Sep 2017 09:32
Last Modified:	27 Sep 2017 09:32
URI:	http://cecri.csircentral.net/id/eprint/3203

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