Murali, K.R. and Thirumoorthy, P. (2009) Photoelectrochemical properties of CdSxTe1-x films. Chalcogenide Letters, 6 (8). pp. 377-384. ISSN 1584-8663

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Abstract

CdSxTe1-x films were deposited on titanium and conducting glass substrates at room temperature using 0.25 M cadmium sulphate, the concentration of sodium thiosulphate and TeO2 dissolved in sodium hydroxide was varied in the range of 0.01–0.05 M. The as deposited films exhibited hexagonal structure irrespective of the composition. The FWHM maximum of the x-ray diffraction peaks were found to decrease with increase of duty cycle. The optical energy gap values are in the range of 1.54–2.32 eV for films of different composition, it is observed that the band gap shifts towards CdS side as the concentration of CdS in the films increase. Photoelectrochemical cell studies indicated higher short circuit current density and efficiency compared to earlier reports.

Item Type:	Article
Uncontrolled Keywords:	Cd-S-Te; Thin films, Structure; Optical gap; Photoelectrochemical cell
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	TTBD CECRI
Date Deposited:	18 Jan 2012 08:27
Last Modified:	18 Jan 2012 08:27
URI:	http://cecri.csircentral.net/id/eprint/279

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