Lokhande, C.D. (1987) Electrodeposition of semiconductor layers of In-Se, CuSe and Cu-In-Se. Bulletin of Electrochemistry , 3 (3). pp. 219-223. ISSN 0256-1654
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Abstract
The semiconducting layers of indium-selenide (In-Se), copper-selenide (Cu-Se) and copper-indium-selenide (Cu-ln- Se) have been electrodeposited under d.c. conditions. As deposited, tn-Se and Cu-Se layers were selenium rich. Heat treatment resulted in the formation of In-Se and Cu1.72-Se compounds. Cu-In-Se layers have been prepared by three routes; by sequential electrodeposition of In-Se layer on Cu-Se; vice versa; and direct electrodeposition of Cu-In-Se layers. All these layers were found to be Cu-rich and polycrystallinein nature.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Ectrodepositiion; indium selenide; copper selenide; copper indium selenide |
| Subjects: | Electrodeposition Electrochemical Materials Science |
| Divisions: | UNSPECIFIED |
| Depositing User: | ttbdar CECRI |
| Date Deposited: | 23 Mar 2012 12:33 |
| Last Modified: | 23 Mar 2012 12:33 |
| URI: | http://cecri.csircentral.net/id/eprint/2243 |
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