Ramprakash, Y. and Basu, S. and Bose, D.N. (1985) Photoelectrochemical studies on p-InP/SnO2 heterojunctions. Bulletin of Electrochemistry , 01 (06). pp. 577-579. ISSN 0256-1654

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Abstract

Transparent and conducting films of SnOz were deposited by spray pyrolysis technique from solution containing stannous chloride, HCI, ethanol and water onto heated glass and p-lnP substrates kept at 450°C in air. The P-lnP/Sn02 heterojunctions thus formed were used as photoelectrodes in 0.5 MH2S04- 0.1 M ~e'*'~*re dox electrolytes. Current-voltage characteristics In dark showed rectifying behaviourwhile Mott-Schottky plots in an indifferent electrolyte confirmed a negatlve band-bending. The flat-band potential (Vm) was thus found to be - 0.27V vs SCE. Spectral response over the wavelength range 0.4 to 0.8pm was characteristic of absorption in InP. On illuminating with a tungsten-halogen lamp providing approximately AM 1 intensity at the photoelectrode, the photoelectrochemical (PEC) cell produced an opencircuit voltage, Voc = O.15V, and a short-circuit current density J, , , = 871c~lcm2T.h ese results are discussed with the help of a band diagram

Item Type:	Article
Uncontrolled Keywords:	Photoelectrode; Photoelectrochemical cells; P-lnP/Sn02
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdu cecri
Date Deposited:	21 Mar 2012 02:21
Last Modified:	21 Mar 2012 02:21
URI:	http://cecri.csircentral.net/id/eprint/2143

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