Josephsahayaanand, T. and Sanjeeviraja, C. and Jayachandran, M. (2001) Preparation of layered semiconductor (MoSe2) by electrosynthesis. Vacuum, 60. pp. 431-436. ISSN 0042-207X

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Abstract

Molybdenum dichalcogenides are semiconductors, which can act as e$cient electrodes in the realization of photoelectrochemical solar cells. Among molybdenum dichalcogenides (MoS2, MoSe2 and MoTe2), MoSe2 has led to the best solid state cells with e$ciencies exceeding 6%. The main advantage of these MoSe2 semiconductor is the prevention of electrolyte corrosion, because of the phototransitions involving non-bonding d}d orbital of the Mo atoms. MoSe2 thin "lms have been electrodeposited cathodically on tin oxide (SnO2)-coated conducting glass substrates from an ammonaical solution of H2MoO4 and SeO2 under potentiostatic condition. The electrode potential was "xed at!0.9 <SCE and the pH was maintained at 9.3$0.1. The bath temperature was maintained at 403C. X-ray di!raction analysis showed the presence of highly textured MoSe 2 "lms with polycrystalline nature. The optical absorption spectra show that the material has an indirect band-gap value of 1.17 eV. Atomic force microscope (AFM) study was used to and the surface roughness of the "lm and surface morphology studies by scanning electron microscope (SEM) show that the "lms are smooth, uniform and pin-hole-free useful for device fabrication.

Item Type:	Article
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdu cecri
Date Deposited:	06 May 2012 06:34
Last Modified:	06 May 2012 06:34
URI:	http://cecri.csircentral.net/id/eprint/1160

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