Josephprince, J. and Ramamurthy, S. and Subramanian, B. and Sanjeeviraja, C. and Jayachandran, M. (2004) Spray pyrolysis growth and material properties of In2O3 films. Journal of Crystal Growth, 240 (1). pp. 142-151. ISSN 0022-0248

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Abstract

Indium oxide (In2O3) thin films have been prepared by spray pyrolysis using a very low concentration of indium precursor. The spray process parameters like the concentration of precursor in spray solution, ethanol+water, air-flow rate, substrate–nozzle distance and substrate temperature have been optimized for obtaining optically transparent, conducting and device-quality In2O3 films. The material properties are reported by studying the structural, electrical and optical properties of the In2O3 films prepared at a relatively lower temperature of 3801C. The surface morphology has been studied by scanning electron microscopy and atomic force microscopy. A possible film growth mechanism has been proposed for preparing device-quality In2O3 films using lower substrate temperatures. r 2002 Published by Elsevier Science B.V.

Item Type:	Article
Uncontrolled Keywords:	Characterization; Polycrystalline deposition; Semiconducting materials; Solar cells
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdu cecri
Date Deposited:	06 Apr 2012 14:32
Last Modified:	06 Apr 2012 14:32
URI:	http://cecri.csircentral.net/id/eprint/1065

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