Murali, K.R. and Srinivasan, K. and Trivedi, D.C. (2004) Structural and photoelectrochemical properties of CdSe thin films deposited by the vacuum evaporation technique. Materials Science and Engineering: B, 111 (1). pp. 1-4. ISSN 0921-5107

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Abstract

The structural and photoelectrochemical (PEC) properties of vacuum evaporated CdSe films using the laboratory synthesized powder as source material was studied. The substrate temperature was varied in the range 300–473 K. X-ray diffraction studies indicated preferential orientation in the (002) direction. SEM studies indicated increase of grain size from 1.0 to 3.0 �m with increase of substrate temperature. The power conversion efficiency was found to be 7.0% under an illumination of 60 mW cm−2 after photoetching. A peak quantum efficiency of 0.6 was obtained for an incident wavelength of 720 nm. Semiconducting parameters were estimated.

Item Type:	Article
Uncontrolled Keywords:	CdSe; Thin films; Vacuum evaporation; Photoelectrochemistry
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdu cecri
Date Deposited:	05 Apr 2012 10:54
Last Modified:	05 Apr 2012 10:54
URI:	http://cecri.csircentral.net/id/eprint/1025

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