Lokhande, C.D. (1987) Electrodeposition of semiconductor layers of In-Se, CuSe and Cu-In-Se. Bulletin of Electrochemistry , 3 (3). pp. 219-223. ISSN 0256-1654

PDF - Published Version
Download (298Kb) | Preview


The semiconducting layers of indium-selenide (In-Se), copper-selenide (Cu-Se) and copper-indium-selenide (Cu-ln- Se) have been electrodeposited under d.c. conditions. As deposited, tn-Se and Cu-Se layers were selenium rich. Heat treatment resulted in the formation of In-Se and Cu1.72-Se compounds. Cu-In-Se layers have been prepared by three routes; by sequential electrodeposition of In-Se layer on Cu-Se; vice versa; and direct electrodeposition of Cu-In-Se layers. All these layers were found to be Cu-rich and polycrystallinein nature.

Item Type: Article
Uncontrolled Keywords: Ectrodepositiion; indium selenide; copper selenide; copper indium selenide
Subjects: Electrodeposition
Electrochemical Materials Science
Depositing User: ttbdar CECRI
Date Deposited: 23 Mar 2012 12:33
Last Modified: 23 Mar 2012 12:33
URI: http://cecri.csircentral.net/id/eprint/2243

Actions (login required)

View Item View Item