Murali, K.R. and Austine, A. and Trivedi, D.C. (2005) Properties of ZnSe films brush plated on high temperature substrates. Materials Letters, 59 (21). pp. 2621-2624.

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Abstract

ZnSe thin films were brush plated on substrates maintained at temperatures in the range 30–90 -C from the precursors. The films exhibited cubic structure. Optical band gap of 2.70 eV was obtained. XPS measurements indicated the formation of ZnSe. AFM studies indicated the formation of fine grains of the order of 50 nm, for the films deposited on room temperature substrates. Luminescence emission was observed at 675 nm for an excitation of 450 nm.

Item Type:	Article
Uncontrolled Keywords:	ZnSe; Semiconductor; Thin film; Electrodeposition; Brush plating
Subjects:	Functional Materials Industrial Metal Finishing Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	TTBD CECRI
Date Deposited:	17 Jan 2012 06:57
Last Modified:	17 Jan 2012 06:57
URI:	http://cecri.csircentral.net/id/eprint/136

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