Josephprince, J. and Ramamurthy, S. and Subramanian, B. and Sanjeeviraja, C. and Jayachandran, M. (2004) Spray pyrolysis growth and material properties of In2O3 films. Journal of Crystal Growth, 240 (1). pp. 142-151. ISSN 0022-0248

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Indium oxide (In2O3) thin films have been prepared by spray pyrolysis using a very low concentration of indium precursor. The spray process parameters like the concentration of precursor in spray solution, ethanol+water, air-flow rate, substrate–nozzle distance and substrate temperature have been optimized for obtaining optically transparent, conducting and device-quality In2O3 films. The material properties are reported by studying the structural, electrical and optical properties of the In2O3 films prepared at a relatively lower temperature of 3801C. The surface morphology has been studied by scanning electron microscopy and atomic force microscopy. A possible film growth mechanism has been proposed for preparing device-quality In2O3 films using lower substrate temperatures. r 2002 Published by Elsevier Science B.V.

Item Type: Article
Uncontrolled Keywords: Characterization; Polycrystalline deposition; Semiconducting materials; Solar cells
Subjects: Electrochemical Materials Science
Depositing User: ttbdu cecri
Date Deposited: 06 Apr 2012 14:32
Last Modified: 06 Apr 2012 14:32

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