Group by: Item Type | No Grouping Jump to: Article Number of items: 6. ArticleRamamoorthy, K. and Sanjeeviraja, C. and Jayachandran, M. and Sankaranarayanan, K. and Misra, P. and Kukreja, L.M. (2006) Development of a novel high optical quality ZnO thin films by PLD for III–V opto-electronic devices. Current Applied Physics, 6 (1). pp. 103-108. ISSN 1567-1739 Ramamoorthy, K. and Jayachandran, M. and Sankaranarayanan, K. and Misra, P. and Kukreja, L.M. and Sanjeeviraja, C. (2004) Development of a novel high speed (electron-mobility) epi-n-ZnO thin films by L-MBE for III–V opto-electronic devices. Current Applied Physics, 4 (6). pp. 679-684. ISSN 1567-1739 Ramamoorthy, K. and Jayachandran, M. and Sankaranarayanan, K. and Misra, P. and Kukreja, L.M. and Sanjeeviraja, C. (2004) Epi-n-IZO thin films/(100) Si, GaAs and InP by L-MBE––a novel feasibility study for SIS type solar cells. Solar Energy, 77 (2). pp. 193-201. ISSN 0038-092X Ramamoorthy, K. and Sanjeeviraja, C. and Jayachandran, M. and Sankaranarayanan, K. and Misra, P. and Kukreja, L.M. (2004) Epitaxial lattice matching between epi-n-IZO thin films and (1 0 0) Si, GaAs and InP wafers with out any buffer layers by L-MBE technique: a novel development for III–V opto-electronic devices. Materials Chemistry and Physics, 84 (1). pp. 14-19. ISSN 0254-0584 Ramamoorthy, K. and Jayachandran, M. and Sankaranarayanan, K. and Ganesan, V. and Misra, P. and Kukreja, L.M. and Sanjeeviraja, C. (2004) Fabrication of novel nanoarchitecture for epi-izo thin films on <100> Si, Gaas and INP single crystal wafers by L-MBE. Surface Engineering, 20 (3). pp. 205-210. ISSN 0267-0844 Ramamoorthy, K. and Sanjeeviraja, C. and Jayachandran, M. and Sankaranarayanan, K. and Misra, P. and Kukreja, L.M. (2003) Epi-n-ZnO//100S Si, GaAs and InP by L-MBE: A novel approach for III–V devices. Materials Science in Semiconductor Processing, 6. pp. 219-224. |