Murali, K.R. and Austine, A. and Jayasutha, B. (2004) Brush plated CdSe films on high temperature substrates. Journal of Materials Science, 39 (13). pp. 4345-4347. ISSN 0022-2461

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Abstract

CdSe is a direct band gap semiconductor belonging to the II–VI group and possessing excellent optoelectronic properties. Thin film transistors and image intensifier tubes have been fabricated with this material. It is also a very stable photo anode in wet photovoltaic cells. Several physical and chemical techniques are available for the growth of thin films of CdSe [1–5]. Though results on brush plated CdSe films have been reported earlier [6], the films were deposited on room temperature substrates. To our knowledge, this is the first report on CdSe films grown by the brush plating technique on substrates maintained at higher temperatures.

Item Type:	Article
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdu cecri
Date Deposited:	26 Mar 2012 10:29
Last Modified:	26 Mar 2012 10:29
URI:	http://cecri.csircentral.net/id/eprint/962

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