Ramamoorthy, K. and Sanjeeviraja, C. and Jayachandran, M. and Sankaranarayanan, K. and Misra, P. and Kukreja, L.M. (2003) Epi-n-ZnO//100S Si, GaAs and InP by L-MBE: A novel approach for III–V devices. Materials Science in Semiconductor Processing, 6. pp. 219-224.

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Abstract

Highly textured zinc oxide (ZnO) thin films have been optimized and deposited by pulsed laser deposition (PLD), i.e., laser-molecular beam epitaxy technique on /100S Si, GaAs and InP wafers compatible with current semiconductor processing techniques. To our knowledge this is the first time that the PLD deposited zinc oxide thin films on semiconductor wafers have been applied to semiconductor–insulator–semiconductor type multi junction (homo and hetero) solar cell structures as wide band gap transparent conducting oxide (TCO) front electrode-emitter layers. In this present work, the effects of various substrate temperatures and substrates on ZnOthin film growth, structural and compositional properties were analyzed and the feasibility of developing high-quality TCOthin films for optoelectronic devices was also studied simultaneously. Increasing the deposition temperature leads the thin films to fine nano-structures. Our achievement in this work is elimination of any buffer layer like GaN and we have obtained good epitaxial lattice matching between the ZnOfunctional layers and the /100S substrates suitable for III–V-based highspeed opto- and micro-electronic devices.

Item Type:	Article
Uncontrolled Keywords:	Laser epitaxy; Semiconducting materials; Thin film structure and morphology; Buffer layer on InP; Solar cells
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdar CECRI
Date Deposited:	24 Mar 2012 07:32
Last Modified:	24 Mar 2012 07:32
URI:	http://cecri.csircentral.net/id/eprint/910

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