Devadasan, J.J. and Sanjeeviraja, C. and Jayachandran, M. (2003) Electrosynthesis and characterisation of n-WSe2 thin films. Materials Chemistry and Physics, 77. pp. 397-401. ISSN 0254-0584

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Abstract

Tungsten diselenide (WSe2) semiconductor thin films were electrodeposited by the galvanostatic route. Polycrystalline n-WSe2 thin filmswere deposited on transparent conducting oxide (TCO) coated glass substrates. The variation of growth rate with temperature has been studied. Both the as-deposited and annealed films showed hexagonal structure. The optical absorption studies showed a direct band gap nature of the WSe2 films. The composition of the film was found by EDAX analysis. The surface morphology of the films were studied by scanning electron microscopy. The type of the semiconductor was found from the Mott–Schottky plot as n-type and confirmed by hot probe technique. The semiconductor parameters like acceptor density and flatband potential were reported from the study of Mott–Schottky plots.

Item Type:	Article
Uncontrolled Keywords:	WSe2 thin films electrodeposition; Structural; Mott–Schottky; Characterisation
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdar CECRI
Date Deposited:	24 Mar 2012 07:28
Last Modified:	24 Mar 2012 07:28
URI:	http://cecri.csircentral.net/id/eprint/897

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