Murali, K.R. and Ziaudeen, M. and Jayaprakash, N. (2006) Structural and electrical properties of brush plated ZnTe films. Solid-State Electronics, 50. pp. 1692-1695. ISSN 0038-1101

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Abstract

Zinc telluride thin films were deposited by the brush plating technique at a potential of 0.90 V (SCE) on conducting glass and titanium substrates at different temperatures in the range 30–90 C. The films were polycrystalline in nature with peaks corresponding to the cubic phase. Direct band gap of 2.30 eV was observed. XPS studiers indicated the formation of ZnTe. Depth profiling studies indicated a uniform distribution of Zn and Te throughout the entire thickness. EDAX measurements were made on the films and it was found that there was a slight excess of Te. The carrier concentration was found to vary from 1014–1015 cm-3 with increase of substrate temperature. The mobility was found to vary from 5 to 60 cm2 V-1 s-1.

Item Type:	Article
Uncontrolled Keywords:	ZnTe; Thin films; Structural properties; Electrical parameters
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdu cecri
Date Deposited:	06 Apr 2012 15:11
Last Modified:	06 Apr 2012 15:11
URI:	http://cecri.csircentral.net/id/eprint/831

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