Murali, K.R. and Jayasuthaa, B. (2007) Properties of CdTe films brush plated on high temperature substrates. Materials Science in Semiconductor Processing, 10. pp. 36-40.

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CdTe thin films were brush plated on substrates maintained at temperatures in the range 30–90 1C from the precursors. The films exhibited cubic structure. Optical band gap of 1.45 eV was obtained. XPS measurements indicated the formation of CdTe. AFM studies indicated the formation of fine grains of the order of 50 nm, for the films deposited on room temperature substrates. Hot probe measurements indicated films to be n-type. A mobility in the range of 5–60 cm2V�1 s�1 and a carrier density of 1015 cm�3 was obtained.

Item Type: Article
Uncontrolled Keywords: CdTe; Thin films; Brush plating; Electrical properties
Subjects: Electrochemical Materials Science
Depositing User: ttbdar CECRI
Date Deposited: 27 Mar 2012 15:33
Last Modified: 27 Mar 2012 15:33

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