Savarimuthu, E. and Lalithambika, K.C. and Mosesezhilraj, A. and Nehru, L.C. and Ramamurthy, A. and Thayumanavan, S. and Sanjeeviraja, C. and Jayachandran, M. (2007) Synthesis and materials properties of transparent conducting In2O3 films prepared by sol–gel-spin coating technique. Journal of Physics and Chemistry of Solids, 68. pp. 1380-1389.

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Transparent conducting indium oxide (In2O3) thin films have been prepared on glass substrates by the simple sol–gel-spin coating technique. These films have been characterized by X-ray diffraction, resistivity and Hall effect measurements, optical transmission, scanning electron microscopy and atomic force microscopy for their structural, electrical, optical and morphological properties. The influence of spin parameters, number of coating, process temperature on the quality of In2O3 films are studied. In the operating range of deposition, 400–475 1C, all the films showed predominant (2 2 2) orientation. Films deposited at optimum process conditions exhibited a resistivity of 2,10,2Ocm along with the average transmittance of about 80% in the visible spectral range (400–700 nm).

Item Type: Article
Uncontrolled Keywords: A. Thin films; C. X-ray diffraction
Subjects: Electrochemical Materials Science
Depositing User: ttbdar CECRI
Date Deposited: 29 Mar 2012 07:57
Last Modified: 29 Mar 2012 07:57

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