Murali, K.R. (2007) Properties of GaAs films deposited by pulse periodic technique. Journal of Materials Science: Materials in Electronics, 42. pp. 1321-1324. ISSN 0957-4522

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GaAs is a III-V compound possessing high mobility and a direct band gap of 1.43 eV , making it a very suitable candidate for photovoltaic applications. Thin GaAs films were prepared at room temperature by plating an aqueous solution containing GaCl3 and As2O3 at a pH of 2. The current density was kept as 50 mA cm–2 and the duty cycle was varied in the range 10–50%. The films were deposited on titanium and tin oxide coated glass substrates. Films exhibited polycrystalline nature with peaks corresponding to single phase GaAs. Optical absorption measurements indicated a direct band gap of 1.40 eV. The surface roughness of the films varied from 3 nm to 6 nm as the duty cycle increased. Raman spectra indicated both the LO and TO phonons for the films deposited at duty cycles above 25%. Photoelectrochemical studies indicated that the current and voltage output are higher than earlier reports on thin film electrodes.

Item Type: Article
Subjects: Electrochemical Materials Science
Depositing User: ttbdar CECRI
Date Deposited: 29 Mar 2012 07:52
Last Modified: 29 Mar 2012 07:52

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