Murali, K.R. and Trivedi, D.C. (2006) Preparation of pulse plated GaAs films. Journal of Physics and Chemistry of Solids, 67 (7). pp. 1432-1435. ISSN 0022-3697

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Abstract

Thin GaAs films were prepared by pulse plating from an aqueous solution containing 0.20M GaCl3 and 0.15M As2O3 at a pH of 2 and at room temperature. The current density was kept as 50mAcm2 the duty cycle was varied in the range 10–50%. The films were deposited on titanium, nickel and tin oxide coated glass substrates. Films exhibited polycrystalline nature with peaks corresponding to single phase GaAs. Optical absorption measurements indicated a direct band gap of 1.40 eV. Photoelectrochemical cells were made using the films as photoelectrodes and graphite as counter electrode in 1M polysulphide electrolyte. At 60mWcm2 illumination, an open circuit voltage of 0.5V and a short circuit current density of 5.0mAcm2 were observed for the films deposited at a duty cycle of 50%.

Item Type:	Article
Uncontrolled Keywords:	Thin films
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdu cecri
Date Deposited:	06 Apr 2012 04:17
Last Modified:	06 Apr 2012 04:17
URI:	http://cecri.csircentral.net/id/eprint/699

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