Malathy, V. and Sivaranjani, S. and Vidhya, V.S. and Joseph Prince, J. and Balasubramanian, T. and Sanjeeviraja, C. and Jayachandran, M. (2009) Amorphous to crystalline transition and optoelectronic properties of nanocrystalline indium tin oxide (ITO) films sputtered with high rf power at room temperature. Journal of Non-Crystalline Solids, 355 (28-30). pp. 1508-1516.

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ITO thin films were deposited on quartz substrates by the rf sputtering technique using various rf power keeping the substrates at room temperature. The influence of rf power on the structural, electrical, optical and morphological properties was studied by varying the rf power in the range 50–350 W. X-ray diffraction results show an amorphous – crystalline transition with nano grains. At a power of 250 W, the ITO film showed preferential orientation along (4 0 0) peak. It is observed from the optical transmission studies that the optical band gap increased from 3.57 to 3.69 eV when the rf power was increased from 50 to 250 W. The resistivity value is minimum and grain size is maximum for the ITO film deposited at 250 W. The X-ray photoelectron spectroscopy (XPS), Energy dispersive X-ray (EDX) and Atomic force microscopy AFM results confirm that the ITO films are stoichiometric and the surface contained nano-sized grains distributed uniformly all over the surface. It can be concluded that the ITO film deposited at room temperature with 250Wrf power, can provide the required optical and electrical properties useful for developing optoelectronic devices at lower temperatures.

Item Type: Article
Uncontrolled Keywords: UPS/XPS; X-ray diffraction; Conductivity; Sputtering; Optical spectroscopy; Atomic force
Subjects: Electrochemical Materials Science
Depositing User: TTBD CECRI
Date Deposited: 20 Jan 2012 22:35
Last Modified: 20 Jan 2012 22:35

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