Murali, K.R. and Austine, A. (2009) Photoelectrochemical properties of brush plated CdxZn1-xSe films. Journal of Materials Science: Materials in Electronics, 20 (1). pp. 92-97. ISSN 0957-4522

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Abstract

CdxZn1-xSe films (0 B x B 1) were deposited for the first time by the brushplating technique at room temperature from an aqueous bath containing zincsulphate, cadmiumsulphate and seleniumoxide.The deposition current densitywas varied in the range of 50–250 mA cm-2. The as deposited films exhibitedcubic structure. Composition of the films was estimated by EDAX studies. XPSstudies indicated the binding energies corresponding to Zn(2p3/2), Cd(3d5/2 and 3d3/2) and Se(3d5/2 and 3d3/2). Optical band gap of the films varied from 1.72 to 2.70 eV as the composition varied from CdSe to ZnSe side.Atomic forcestudies indicated grain size in the range of 20–150 nm. Photoelectrochemical cells were made with polysulphide as the redox electrolyte. The output was maximum for the photoelectrodes of composition Cd0.9Zn0.1Se.

Item Type:	Article
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	TTBD CECRI
Date Deposited:	02 Apr 2012 06:09
Last Modified:	02 Apr 2012 06:09
URI:	http://cecri.csircentral.net/id/eprint/512

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