Subramanian, B. and Ibrahim, M. and Murali, K.R. and Vidhya, V.S. and Sanjeeviraja, C. and Jayachandran, M. (2009) Structural, optoelectronic and electrochemical properties of nickel oxide films. Journal of Materials Science: Materials in Electronics, 20 (10). pp. 953-957. ISSN 0957-4522

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Abstract

Thin nickel oxide (NiO) films were deposited by the electron beam evaporation technique. The films were post annealed in air at 450–500 C for 5 h and the effect of annealing on the structural, microstructural, electrical and optical properties were studied. X-ray diffraction studies indicated the polycrystalline nature of the films. The microstructural parameters were evaluated. The band gap of the films was found to be about 3.60 eV. Electrical resistivity of the films was 4.5 9 10-4 X cm. FTIR studies indicated a broad spectrum centered at 461.6 cm-1. Cyclic voltammetry studies in 1 M KOH solution revealed good electronic electrochromic behaviour.

Item Type:	Article
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	TTBD CECRI
Date Deposited:	02 Apr 2012 06:21
Last Modified:	02 Apr 2012 06:21
URI:	http://cecri.csircentral.net/id/eprint/510

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