Syedabuthahir, K.A.Z. and Jagannathan, R. (2010) Reverse-loop impedance profile in Bi2S3 quantum dots. Materials Chemistry and Physics, 121. pp. 184-192. ISSN 0254-0584

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Abstract

Bismuth sulfide quantum dots (∼12 nm) with two-dimensional platelet morphology synthesized using a simple aqueous colloidal method exhibit directional growth along 211 direction. Impedance characteristics of this two-dimensional quantum structure yields a characteristic semi-circular profile due to a classical Voigt element in addition to a semi-circle like loop in the negative imaginary part of the impedance Nyquist plot. The apparent inductive reverse-loop impedance profile observed, a distinguishing feature of this study can be explained on the basis of an unusual negative resistor–capacitor combination, realized due to relaxation of surface states in this technologically important semiconductor–quantum structure.

Item Type:	Article
Uncontrolled Keywords:	Nano-structures; Optical properties; Electrochemical properties; Chalcogenides; Semiconductors
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdar CECRI
Date Deposited:	08 May 2012 06:53
Last Modified:	08 May 2012 06:53
URI:	http://cecri.csircentral.net/id/eprint/505

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