Murali, K.R. and Vasantha, S. and Rajamma, K. (2008) Properties of pulse plated ZnS films. Materials Letters, 62 (12-13). pp. 1823-1826. ISSN 0167-577X

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Abstract

Zinc sulphide thin films were deposited by the pulse plating technique at a duty cycle of 20'1" and different deposition cunent densities in the range 50-300 mA cm-2 X-ray diffraction studies indicated thin films to be polycrystalline with wUl1zite structure. Direct optical band gap in the range 01'3.6 .0 eV was obtained lor the films deposited at different deposition current densities. AES studies indicated a Zn/S ratio of 1.02-1.04. The room temperature resistivity values varied in the range of 3.5-17 cm as the deposition current density decreases. Photoluminescence emission peak was observed at 388 nm at room temperature for an excitation of 325 nm.

Item Type:	Article
Uncontrolled Keywords:	Electronic materials; Semiconductors; IT-Vr; Thin films
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdu cecri
Date Deposited:	01 Apr 2012 10:47
Last Modified:	01 Apr 2012 10:47
URI:	http://cecri.csircentral.net/id/eprint/419

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