Murali, K.R. and Thilakvathy, K. and Vasantha, S. and Ooomen, R. (2008) Properties OF ZnSe films pulse plated on high temperature substrates. Chalcogenide Letters, 5 (6). pp. 111-116.

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Abstract

ZnSe films were deposited on titanium and conducting glass substrates at 50 % duty cycle and at different deposition temperatures in the range of 30 - 80°C. The deposition current density was maintained constant at 100 mAcm-2. The prominent peaks corresponding to the cubic phase are observed in all cases. Optical measurements indicated yields band gap in the range of 2.64 – 2.68 eV for the films deposited at different deposition temperatures. Atomic force microscopy studies showed that the crystallite size increased from 43 – 76 nm as the deposition temperature increases. The cross plane resistivity of the films was found to decrease with increase of substrate temperature. The films were doped with copper and the resistivity was found to decrease by three orders.

Item Type:	Article
Uncontrolled Keywords:	II-VI; zinc selenide; semiconductors; thin films
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdu cecri
Date Deposited:	16 Jan 2012 05:35
Last Modified:	16 Jan 2012 05:35
URI:	http://cecri.csircentral.net/id/eprint/39

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