Kalaivanan, A. and Perumal, S. and Pillai, N.N. and Murali, K.R. (2011) Characteristics of GZO thinfilms deposited by sol–gel dip coating. Materials Science in Semiconductor Processing, 14 (02). pp. 94-96. ISSN 1369-8001

[img] PDF - Published Version
Restricted to Registered users only

Download (343Kb) | Request a copy


Zinc oxide(ZnO)films were deposited by sol–gel dip coating using the acrylamide route. The films were doped with different concentrations of gallium in the range 250–1200 ppm. The films exhibited hexagonal structure. The grain size decreased from 100 to 10 nm as the dopant concentration increased. The resistivity of the doped samples decreased from 10 power 3 to 3*10 power 3 Ohm cm. The bandgap value shifted towards the short-wavelength region as the dopant concentration increased. XPS studies indicated doping of Ga in ZnO

Item Type: Article
Uncontrolled Keywords: ZnO; Thin films; II–VI; Sol–gel coating
Subjects: Electrochemical Materials Science
Depositing User: ttbdu cecri
Date Deposited: 19 Nov 2012 09:36
Last Modified: 19 Nov 2012 09:36
URI: http://cecri.csircentral.net/id/eprint/2922

Actions (login required)

View Item View Item