Murali, K.R. and Matheline, M. and John, R. (2009) Characteristics of brush electrodeposited CdS films. Chalcogenide Letters, 6 (9). pp. 483-490. ISSN 1584-8663
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Abstract
CdS films were deposited by the brush electrodeposition technique on conducting glass and titanium substrates at different current densities in the range of 30 – 300 mA cm-2 and at 80°C. The films exhibited polycrystalline structure with the cubic phase. After post heat treatment in argon atmosphere the crystal structure changed to hexagonal. The band gap of the films was around 1.39eV. The refractive index value decreases from 2.6 to 1.57 as the wavelength increased from 550 nm to 1000 nm. The electrical conductivity varied in the range of 0.1 to 20 ohm cm as the annealing temperature is increased. The value of carrier density decreases from 3.13 x 1018 to 2.7 x 1017 cm-3 with increase of annealing temperature.Laser Raman studies indicated LO phonon peaks at 150 cm-1 and 600 cm-1.
Item Type: | Article |
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Uncontrolled Keywords: | CdS; II-VI; Thin films; Semiconductor; XRD; UV-vis |
Subjects: | Electrochemical Materials Science |
Divisions: | UNSPECIFIED |
Depositing User: | TTBD CECRI |
Date Deposited: | 18 Jan 2012 08:23 |
Last Modified: | 18 Jan 2012 08:23 |
URI: | http://cecri.csircentral.net/id/eprint/290 |
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