Vidhya, V.S. and Murali, K.R. and Subramanian, B. and Manisankar, P. and Sanjeeviraja, C. and Jayachandran, M. (2011) Photoluminescent studies on porous silicon/tin oxide heterostructures. Journal of Alloys and Compounds, 509 (006). pp. 2842-2845. ISSN 0925-8388

[img] PDF - Published Version
Restricted to Registered users only

Download (644Kb) | Request a copy


Porous silicon (PSi) structure was formed at different current densities in the range of 5–60mA/cm2 by the electrochemical anodization of PSi wafers etching in HF for 30 min. The PSi was characterized by X-ray diffraction studies. The PSi samples prepared at current densities above and below 30mA/cm2 show PL spectra with asymmetric and overlapped peaks. On the top surface as well as inside the pores of this PSi structures the precursor sol–gel was incorporated by the spin coating technique and SnO2 was formed by heating at 400 ◦C in air. Peaks pertaining to PSi along with those corresponding to SnO2 were observed, which confirmed SnO2 formation as thin film on the PSi surface. The PL spectra of SnO2/PSi structure aged for two months indicated a reduction in PL intensity but remained constant afterwards. SnO2 not only modifies the nature of silicon nanopores but also is expected to influence the interface states in SnO2/PSi junction

Item Type: Article
Uncontrolled Keywords: PSi; Electrochemical etching; Tin oxide; PSi/SnO2
Subjects: Electrochemical Materials Science
Depositing User: ttbdu cecri
Date Deposited: 19 Nov 2012 07:40
Last Modified: 19 Nov 2012 07:40

Actions (login required)

View Item View Item