Murali, K.R. and Austine, A. (2009) Deposition of Cd-xZn1-xSe films by brush electrodeposition and their characteristics. Chalcogenide Letters, 6 (1). pp. 23-28. ISSN 1584-8663

[img] PDF
Restricted to Registered users only

Download (410Kb) | Request a copy


CdxZn1-xSe films(0≤x≤1) were deposited for the first time by the brush plating technique at room temperature from an aqueous bath containing zinc sulphate, cadmium sulphate and selenium oxide. The deposition current density was varied in the range of 50 – 250 mA cm-2. The as deposited films exhibited cubic structure. Composition of the films was estimated by EDAX studies. Optical band gap of the films varied from 1.72 eV to 2.70 eV as the composition varied from CdSe to ZnSe side. Electrical properties of the films were determined at room temperature. The room temperature resistivity, carrier density and mobility varied in the range of 9.0 ohm cm – 200 ohm cm,10 – 2 cm2V-1s-1 and 6.94 x 1016 – 1.56 x 1016 cm-3 respectively as the composition changed from CdSe to ZnSe side.

Item Type: Article
Uncontrolled Keywords: Semiconductor; II-VI; Thin films; Electrodeposition
Subjects: Electrochemical Materials Science
Depositing User: TTBD CECRI
Date Deposited: 18 Jan 2012 08:27
Last Modified: 18 Jan 2012 08:27

Actions (login required)

View Item View Item