Murali, K.R. and Dhanapandiyan, S. and Manoharan, C. (2009) Pulse electrodeposited zinc selenide films and their characteristics. Chalcogenide Letters, 6 (1). pp. 51-56. ISSN 1584-8663

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Abstract

Zinc selenide (ZnSe) thin films were pulse deposited for the first time using polycyclic acid. The films exhibited hexagonal structure. The band gap of the films varied in the range of 2.7 – 3.1 eV as the concentration of silico-tungstic acid increased. Atomic force microscopy indicated grain size decreased from 60 – 15 nm after addition of silicotungstic acid. Laser Raman spectrum exhibited LO phonons corresponding to ZnSe. The photoluminescence spectrum peaks at 675 nm. As the concentration of silico-tungstic acid increases, the PL emission peak shifts to shorter wavelenghths.

Item Type:	Article
Uncontrolled Keywords:	ZnSe; II-VI; thin films; chalcogenides
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	TTBD CECRI
Date Deposited:	18 Jan 2012 08:30
Last Modified:	18 Jan 2012 08:30
URI:	http://cecri.csircentral.net/id/eprint/283

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