Murali, K.R. and Manoharan, C. and Dhanapandiyan, S. (2009) Photoelectrochemical properties of pulse electrodeposited cadmium selenide films. Chalcogenide Letters, 6 (1). pp. 57-61. ISSN 1584-8663

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Abstract

CdSe films were deposited by the pulse plating technique in the presence of silicotungstic acid.The films deposited in the presence of silicotungstic acid exhibited hexagonal structure. The films exhibited a direct band gap of 1.67 eV. With addition of silsicotungstic acid, the average grain size decreased from 17.1 nm to 11.7 nm, and the grain became more homogeneous.The surface roughness decreased from 2.83 nm to 1.97 ater adding silicotungstic acid.The efficiency of the photoelectrochemical cells increases with addition of silico-tungstic acid.

Item Type:	Article
Uncontrolled Keywords:	CdSe; II-VI; thin films; chalcogenides
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	TTBD CECRI
Date Deposited:	18 Jan 2012 08:29
Last Modified:	18 Jan 2012 08:29
URI:	http://cecri.csircentral.net/id/eprint/282

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