Syedbasheerahamed, M.S. and Balu, A.R. and Nagarethinam, V.S. and Thayumanavan, A. and Murali, K.R. and Sanjeeviraja, C. and Jayachandran, M. (2010) Structural, optical, and electrical properties of electron beam evaporated CdSe thin films. Crystal Research and Technology, 45 (4). 387 -392. ISSN 0232-1300

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CdSe films have been deposited on glass substrates at different substrate temperatures between room temperature and 300 °C. The films exhibited hexagonal structure with preferential orientation in the (002) direction. The crystallinity improved and the grain size increased with temperature. Band gap values are found decreasing from about 1.92 eV to 1.77 eV with increase of the substrate temperature. It is observed that the resistivity decreases continuously with temperature. Laser Raman studies show the presence of 2 LO and 3 LO peaks at 416 cm-1 and 625 cm-1 respectively.

Item Type: Article
Uncontrolled Keywords: CdSe; thin films; II-VI; semiconductors.
Subjects: Electrochemical Materials Science
Depositing User: ttbdar CECRI
Date Deposited: 18 Jan 2012 16:15
Last Modified: 18 Jan 2012 16:15

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