Ahamed, M.G.S.B. and Nagarethinam, V.S. and Balu, A.R. and Thayumanavan, A. and Murali, K.R. and Sanjeeviraja, C. and Jayachandran, M. (2010) Influence of substrate temperature on the properties of electron beam evaporated ZnSe films. Crystal Research and Technology, 45 (4). 421 -426. ISSN 0232-1300

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Abstract

ZnSe films were deposited on glass substrates keeping the substrate temperatures, at room temperature (RT), 75, 150 and 250 °C. The films have exhibited cubic structure oriented along the (111) direction. Both the crystallinity and the grain size increased with increasing deposition temperature. A very high value of absorption co-efficient (104 cm-1) is observed. The band gap values decrease from a value of 2.94 eV to 2.69 eV with increasing substrate temperature. The average refractive index value is in the range of 2.39 – 2.41 for the films deposited at different substrate temperatures. The conductivity values increases continuously with temperature. Laser Raman spectra showed peaks at 140.8 cm-1, 246.7 cm-1 and 204.5 cm-1 which are attributable to 2TA LO phonon and TO phonon respectively.

Item Type:	Article
Uncontrolled Keywords:	ZnSe; II-VI; thin films; semiconductor
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdar CECRI
Date Deposited:	18 Jan 2012 06:16
Last Modified:	18 Jan 2012 06:16
URI:	http://cecri.csircentral.net/id/eprint/201

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