Ramprakash, Y. and Basu, S. and Bose, D.N. (1988) Anodic oxide and its effect on the performance of n-inp pec cells. Bulletin of Electrochemistry , 04 (05). pp. 497-504. ISSN 0256-1654

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The effect of thin oxide films formed anodically on the surface of n-lnP was investigated in redox photoelectrochemical cells. Studies relating to the I- V, C-V, spectral response and solar cell behaviour were carried out. In 0.1 M NaOH-0.1 M &Fe(CN)6, 4.1M K3Fe(CNlg, JO and n showed a decrease in their value for oxidized electrodes compared with bare InP. Barrier heights derived from I-V and C-V data showed an increase with oxide. At A = 0.55 p m, the maximum value of the absolute quantum efficiency was 0.68 without oxide; 0.55 and 0.40 respectively with increasing oxide thickness. In 1M NaOH-IM & Fe (CN)( - 1M K3 Fe(CNI6, the PEC cell showed V, = 0.44 V, J, = 6.4 mAcm-2 , FF = 0.43 with oxide, at 66 mW ~mtun-gst~en. halogen illumination

Item Type: Article
Uncontrolled Keywords: Indium phosphide; Anodic oxide; Photoelectrode; Photoelectrochemical cell; Solar energy conversion
Subjects: Electrochemical Materials Science
Depositing User: ttbdu cecri
Date Deposited: 21 Mar 2012 15:29
Last Modified: 21 Mar 2012 15:29
URI: http://cecri.csircentral.net/id/eprint/1524

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