Subramanian, B. and Mahalingam, T. and Sanjeeviraja, C. and Jayachandran, M. and Chockalingam, M.J. (1999) Electrodeposition of Sn, Se, SnSe and the material properties of SnSe rlms. Thin Solid Films, 357. pp. 119-124. ISSN 0040-6090

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Abstract

A detailed account of the electrochemistry involved in the deposition of Sn, Se and SnSe rlms is presented. The redox reactions and the polarization curves of Sn and Se were studied to rx the pH and potential values V (NHE) to get uniform deposition. Films were cathodically deposited at 558C. XRD studies show an orthorhombic structure. Films showed an indirect band-gap of 1.05 eV. Surface morphological studies were carried out using SEM, and the stoichiometry was estimated from XPS analysis. Effect of annealing in air at 2008C has been reported.

Item Type:	Article
Uncontrolled Keywords:	Electrodeposition; Tin selenide; XRD studies; Optical band gap
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdar CECRI
Date Deposited:	08 May 2012 06:25
Last Modified:	08 May 2012 06:25
URI:	http://cecri.csircentral.net/id/eprint/1322

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