Mosesezhilraj, A. and Ravidhas, C. and Ravishankar, R. and Rathishkumar, A. and Selvan, G. and Jayachandran, M. and Sanjeeviraja, C. (2001) Optimized deposition and characterization of nanocrystalline magnesium indium oxide thin films for opto-electronic applications. Materials Research Bulletin, 44 (5). pp. 1051-1057. ISSN 0025-5408

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Abstract

Transparent conducting magnesium indium oxide films (MgIn2O4) were deposited on to quartz substrates without a buffer layer at an optimized deposition temperature of 450 8C to achieve high transmittance in the visible spectral range and electrical conductivity in the low temperature region. Magnesium ions are distributed over the tetrahedral and octahedral sites of the inverted spinel structure with preferential orientation along (3 1 1) Miller plane. The possible mechanism that promotes conductivity in this system is the charge transfer between the resident divalent (Mg2+) and trivalent (In3+) cations in addition to the available oxygen vacancies in the lattice. A room temperature electrical conductivity of 1.5 � 10�5 S cm�1 and an average transmittance >75% have been achieved. Hall measurements showed n-type conductivity with electron mobility value 0.95 � 10�2 cm2 V�1 s�1 and carrier concentration 2.7 � 1019 cm�3. Smoothness of the film surface observed through atomic force microscope measurements favors this material for gas sensing and opto-electronic device development.

Item Type:	Article
Uncontrolled Keywords:	Thin films; Chemical synthesis; X-ray diffraction; Atomic force microscopy; Electrical proper
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdu cecri
Date Deposited:	06 Apr 2012 15:57
Last Modified:	06 Apr 2012 15:57
URI:	http://cecri.csircentral.net/id/eprint/1162

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