Jayachandran, M. and Paramasivam, M. and Murali, K.R. and Trivedi, D.C. and Raghavan, M. (2001) Synthesis of Porous Silicon nanostructures for photoluminescent devices. Materials Physics and Mechanics, 4. pp. 143-147. ISSN 1605-2730

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Abstract

Porous structures were formed on p-Si wafers under various anodization conditions in ethanolic solutions containing aqueous hydrofluoric acid. The observed photoluminescence at room temperature depends on the anodization current density and the anodization time. Polyaniline (PA) was incorporated into the pores of the porous silicon (PSi) structure by in-situ electrodeposition. The porous structure formation has been confirmed using XRD and SEM studies. Currentvoltage (I-V) characteristics of the polyaniline filled PSi (PA/PSi) structure showed the possibility of using PA as an ohmic contact for PSi based devices.

Item Type:	Article
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdu cecri
Date Deposited:	06 May 2012 06:38
Last Modified:	06 May 2012 06:38
URI:	http://cecri.csircentral.net/id/eprint/1142

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