Murali, K.R. and Swaminathan, V. (2002) Effect of pulse reversal on the properties of pulse plated CdSexTe1x thin films. Journal of Applied Electrochemistry, 32 (10). pp. 1151-1156. ISSN 0021-891X

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CdSexTe1x thin filmswith 0 < x < 1 were deposited on titanium and conducting glass substrates by pulse electrodeposition using microprocessor control. Formation of the solid solution takes place for values of xð0 < x < 1Þ. The filmswer e characterized by X-ray diffraction. While the as-deposited filmsare cubic in nature, those annealed at 475 C in air indicate hexagonal structure and the lattice parameters increase with increasing value of x. From the optical absorption measurements the band gap of the material was calculated. The value of the band gap variesfrom 1.42 to 1.70 eV as x variesfrom 0 to 1. The photoelectrochemical (PEC) characteristics were obtained for all compositions of CdSexTe1x (x ¼ 0–1). The output parametersfor CdSe0.66Te0.34 with 9% duty cycle at an intensity of 80 mW cm2 using 1 M polysulphide as the redox electrolyte, are VOC of 398 mV, JSC of 5.59 mA cm2, ff of 0.45, g of 4.73%, Rs of 13 X, Rsh of 1.50 kX. The output parameterswere found to increase with 60 ms pulse reversal. After photoetching for 40 s, a VOC of 481 mV, JSC of 16.00 mA cm2, ff of 0.57, g of 5.46%, Rs of 6 X, Rsh of 2.16 kX were obtained.

Item Type: Article
Uncontrolled Keywords: CdSexTe1-x; photoelectrochemical cell; pulse reversal; semiconductor; thin films
Subjects: Electrochemical Materials Science
Depositing User: ttbdu cecri
Date Deposited: 06 May 2012 06:21
Last Modified: 06 May 2012 06:21

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