Ramamoorthy, K. and Jayachandran, M. and Sankaranarayanan, K. and Ganesan, V. and Misra, P. and Kukreja, L.M. and Sanjeeviraja, C. (2004) Fabrication of novel nanoarchitecture for epi-izo thin films on <100> Si, Gaas and INP single crystal wafers by L-MBE. Surface Engineering, 20 (3). pp. 205-210. ISSN 0267-0844

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Abstract

It is believed that this is the first time that laser molecular beam epitaxy, i.e. pulsed laser deposition (PLD), deposited epitaxial indium zinc oxide (epi-IZO) thin films on float glass, n100m Si, GaAs and InP wafers have been applied to semiconductor – insulator – semiconductor type heterojunction solar cell structures as wide band gap transparent conducting oxides front electrode collector layers. In the present work, the effects of substrate temperatures, substrates and heavy indium oxide incorporation on epi-IZO thin film growth and novel surface morphological properties were analysed. Hitachi SEM and nanoscope atomic force microscopy revealed that the films were high quality nanostructures, which vary with different substrate temperatures and type of substrate. The morphological study is significant as reported so far. Increasing the substrate temperature causes the films to form a fine nanostructure. Better surface quality was observed on InP than Si and GaAs. Therefore, by the use of PLD with different substrate temperatures and substrates as control tools, a novel nano-architecture was developed for IZO thin films on glass, Si, GaAs and InP semiconductor single crystal wafers. Heavy indium oxide incorporation improves the surface quality of the thin films. The present work will be used, and these data may be helpful, as a scientific or technical basis in semiconductor processing and technology, such as nano-electronics (invisible security circuits) and nanomachining technology.

Item Type:	Article
Uncontrolled Keywords:	Laser; Epitaxy; Semiconductor; Thin films; Structure; Surface morphology; Nano-architecture; Si; GaAs; InP; Solar cells; SEM; Atomic force microscopy; Semiconductor – insulator – semiconductor; Indium zinc oxide
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdu cecri
Date Deposited:	06 Apr 2012 05:27
Last Modified:	06 Apr 2012 05:27
URI:	http://cecri.csircentral.net/id/eprint/1049

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