Swaminathan, V. and Subramanian, V. and Murali, K.R. (2000) Characteristics of CdSe films electrodeposited with microprocessor based pulse plating unit. Thin Solid Films, 359. pp. 113-117.

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Abstract

In this paper we report the results on pulse electrodeposited cadmium selenide thin films using microprocessor control. The as-deposited and heat- treated films were characterized by X-ray diffraction, scanning electron microscope and optical absorption studies. Polycrystalline CdSe films obtained by pulse electrodeposition indicated both cubic and hexagonal structures whose lattice constants agree well with the standard values. An average grain size of 3 mm and an absorption coef®cient of 104 cm21 were obtained by SEM and optical studies. The power conversion ef®ciency for an illumination of 80 mW/cm2 in 1 M polysulphide was in the range of 1.75±2.4% for the films plated at different duty cycles. A peak quantum ef®ciency of 0.75 was obtained at 725 nm. Acceptor concentration of 1:6 £ 1016 cm23, electron mobility of 5.63 cm2/V s, and minority carrier diffusion length of 0.185 mm have been obtained.

Item Type:	Article
Uncontrolled Keywords:	Pulse plating; Semiconductor; PEC; CdSe thin films
Subjects:	Electrochemical Materials Science
Divisions:	UNSPECIFIED
Depositing User:	ttbdar CECRI
Date Deposited:	25 Mar 2012 16:48
Last Modified:	25 Mar 2012 16:48
URI:	http://cecri.csircentral.net/id/eprint/1041

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